NDLI: Slow-wave characteristics of interconnects on silicon substrates

Content Provider	IEEE Xplore Digital Library
Author	Ming-Hsiang Cho Guo-Wei Huang Kun-Ming Chen Hua-Chou Tseng Tsun-Lai Hsu
Copyright Year	2003
Description	Author affiliation: Nat. Nano Device Lab., Hsinchu, Taiwan (Ming-Hsiang Cho; Guo-Wei Huang; Kun-Ming Chen)
Abstract	This paper deals with slow-wave characteristics of interconnects on silicon substrates. In slow-wave mechanism, the microstrip lines with and without bottom-shielded ground structures (MIM structures and MIS structures) are characterized. Slow wave propagation in MIS structure occurs when the operation frequency is not so high and the substrate resistivity is moderate, effective permittivity increases and the propagation velocity slows down due to Maxwell-Wagner mechanism. The transmission line parameters such as series resistances and inductances are calculated as the function of frequency. Results shows that the silicon substrate of the non-shielded transmission line can be treated as imperfect ground plane and called as skin-effect mode.
Sponsorship	IEEE Electron Device Soc. Nat. Sci. Found. Army Research Laboratory Naval Research Laboratory Army Research Office Nat. Inst. of Standards and Technol. Elec. and Comput. Eng. Dept., Univ. of Maryland
Starting Page	188
Ending Page	189
File Size	114386
Page Count	2
File Format	PDF
ISBN	0780381394
DOI	10.1109/ISDRS.2003.1272054
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-12-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Frequency Conductors Capacitance Substrates Microstrip Conductivity Space technology CMOS technology Skin
Content Type	Text
Resource Type	Article

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