NDLI: Integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity

Content Provider	IEEE Xplore Digital Library
Author	Pei Z. Shi, J.-W. Hsu, Y.-M. Yuan, F. Liang, C.-S. Liu, C.W. Pan, T.-M. Lu, S.C. Hsieh, W.-Y. Tsai, M.-J.
Copyright Year	2003
Description	Author affiliation: Electron. Res. & Service Organ., ITRI, Hsinchu, Taiwan (Pei Z; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.-S.; Liu, C.W.; Pan, T.-M.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.)
Abstract	In this paper, we discuss about the SiGe phototransistors (HPT) with SiGe/Si multiple quantum well (MQW) absorption layers and integratable SiGe phototransistor with high speed (BW=3 GHz) and extremely-high avalanche responsivity have been demonstrated. The properly designed non-ideal (nkT) base current can increase the speed of HPT, and have an avalanche bias with extremely high gain. The bandwidth of 3 GHz at normal bias is obtained with transistor's f/sub T/ of /spl sim/ 70 GHz. The integrated photoreceiver using commercial SiGe/Si HBT foundry is feasible.
Sponsorship	IEEE Electron Device Soc. Nat. Sci. Found. Army Research Laboratory Naval Research Laboratory Army Research Office Nat. Inst. of Standards and Technol. Elec. and Comput. Eng. Dept., Univ. of Maryland
Starting Page	18
Ending Page	19
File Size	120191
Page Count	2
File Format	PDF
ISBN	0780381394
DOI	10.1109/ISDRS.2003.1271975
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-12-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Phototransistors Quantum well devices Bandwidth Electromagnetic wave absorption Infrared detectors Optical fiber communication Circuits Heterojunction bipolar transistors
Content Type	Text
Resource Type	Article

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