NDLI: A novel SONOS nonvolatile flash memory device using hot hole injection for write and tunneling to/from gate for erase

Content Provider	IEEE Xplore Digital Library
Author	Wang, Y. Zhao, Y. Khan, B.M. Doherty, C.L. Krayer, J.D. White, M.H.
Copyright Year	2003
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA (Wang, Y.; Zhao, Y.; Khan, B.M.; Doherty, C.L.; Krayer, J.D.; White, M.H.)
Abstract	A novel SONOS (polysilicon-oxide-nitride-oxide-silicon) nonvolatile flash memory device which uses hot hole injection through the bottom oxide for write and tunneling to/from the gate through a thin top oxide for erase, with reduced power consumption, improved retention and subthreshold swing is proposed. The dynamic characteristics along with comparisons to NROM technology, forward/reverse read I/sub DS/ /spl sim/ I/sub GS/ characteristics, programming speeds and retention of SONOS device at room temperature are discussed.
Sponsorship	IEEE Electron Device Soc. Nat. Sci. Found. Army Research Laboratory Naval Research Laboratory Army Research Office Nat. Inst. of Standards and Technol. Elec. and Comput. Eng. Dept., Univ. of Maryland
Starting Page	228
Ending Page	229
File Size	104852
Page Count	2
File Format	PDF
ISBN	0780381394
DOI	10.1109/ISDRS.2003.1272073
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-12-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	SONOS devices Nonvolatile memory Flash memory Hot carriers Tunneling Electron traps CMOS technology Channel hot electron injection Charge carrier processes Energy consumption
Content Type	Text
Resource Type	Article

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