NDLI: III-nitride LED material characterization and device fabrication

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2011 International Semiconductor Device Research Symposium (ISDRS)

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International Semiconductor Device Research Symposium, 2003

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)

SiC bipolar transistors for RF applications

Switching performance for fabricated and simulated 4H-SiC high power bipolar transistors

4H-SiC BJT and Darlington switch for power inverter applications

Demonstration of a 140 A, 800 V, fast recover 4H-SiC P-i-N/Schottky barrier (MPS) diode

Design and fabrication of 4H-SiC APD linear arrays

Deep levels in ion implanted field effect transistors on SiC

Ultrathin NH/sub 3/ annealed atomic layer deposited Si-nitride/SiO/sub 2/ stack gate dielectrics with high reliability

A new chemical mechanical planarization with the frozen chemical etchant as a polishing pad

Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

The electrical characteristics analysis of SiO/sub x/N/sub y/ ARC for sub-0.17/sup /spl middot// /spl middot/Gigabit DRAM

Novel photodetectors using metal-oxide-silicon tunneling structures

Oxide roughness enhanced reliability of MOS tunneling diodes

Terahertz sources based on dynamic negative differential conductivity due to hot electron bunching in momentum space

Photoinjection of hydrogen in solids: electron-proton plasma doping in transition metal oxides (WO/sub 3/, MoO/sub 3/,V/sub 2/O/sub 5/) and drastic enhancement of the print-out effect in silver and cuprous halides (AgCl, AgI, RbAg/sub 4/I/sub 5/, CuCl)

Low-voltage THz stimulated emission of stressed p-Ge

Giant light-modulated permittivity of Pb/sub 0.74/Sn/sub 0.26/Te narrow band-gap isolator: new approach to relaxation processes and potential applications

Carrier lifetime "paradoxes" in high-voltage 4H-SiC diodes

Ge quantum dots on ZnSe/GaAs

Improvement for bond pads discolor (sic) of CMOS image sensor products

Design and layout of Schottky diodes in a standard CMOS process

Preparation of phosphorous doping to beta-iron disilicide thin films and application for devices

Grain boundary controlled poly-Si TFT process employing selective si ion implantation and excimer laser annealing

The temperature dependence of threshold voltage and mobility of polysilicon thin film transistors on flexible stainless steel foil and quartz substrates

A simple variational technique for estimating quantum mechanical charge redistribution effects in deep sub-micron MOS devices

Effects of impurity traps on gate current and trapped charge in MOSFETs

Charge-sheet MOSFET model with surface degeneracy and freezeout

Microscopic analysis of the impact of substrate bias on the gate current of pMOSFETs

Simulation of tunneling gate current in ultra-thin SOI MOSFETs

Numerical study of partial-SOI LDMOSFET power devices

Faster CMOS inverter switching obtained with channel engineered asymmetrical halo implanted MOSFETs

CMOS current-mode binary hysteresis with external controls

Thermal simulation for SOI devices combining a thermal circuit model with device simulation

A closed-form thermal noise model of SOI MOSFETs for low noise application

Conduction mechanisms for off-state leakage of poly-Si thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate

Cascading structure of LDMOS and LIGBT for increasing the forward biased safe operating area (FBSOA)

A novel reaction-diffusion system based on minority-carrier transport in solid-state CMOS devices

A new lateral conductivity modulated thyristor (LCMT)

Thin Ag film formation on thin SOI substrate

Dual anode LIGBT on SOI substrates

Interface structures generated by negative-bias temperature instability in Si/SiO/sub 2/ and Si/SiO/sub x/N/sub y/ interfaces

A theoretical study on dielectric constants of Ta/sub 2/O/sub 5/ thin films deposited on Ru electrodes

The problem originating from the grain boundaries in dielectric storage capacitors

An integrated planar patch-clamp system

Polysilicon diodes as temperature sensors for chemical microreaction systems

Development of InP-based test structures for optical MEMS applications

MEMS-based gray-scale lithography

An integrated BioMEMS fabrication technology

Measurement of noise characteristics of MEMS accelerometers

An analytical model for SiC MESFETs

Ohmic contacts to n-type AlGaN and nitride HEMT epilayers

I-V characteristics of polarization-induced barriers in AlGaN/GaN heterostructures

Gain compression in GaN HEMT amplifiers

RF performance of GaN/AlGaN HEMT amplifier

Characterization of interface traps in subthreshold regions of implanted 6H- and 4H-SiC MOSFETs

Avalanche breakdown of 4H-SiC diodes with edge terminated by a 2/spl deg/ positive bevel

Pt-Ga ohmic contacts to n-ZnO using focused ion beams

Microanalysis of Ni/Si ohmic contacts to n-SiC

The oscillating electrical domains in the 6H-SiC electron unipolar structures

A novel high power bipolar transistor in 4H-SiC

Vertical power JFET in 4H-SiC with an implanted and trenched gate

Amplification of the signal in triode structures of ion detectors based on 6H-SiC epitaxial films

Modeling of nonuniform SiGe heterostructure

Simulation and design of SiGe HBTs for power amplification at 10 GHz

Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb

Electron transport within resonant tunneling diodes with staggered-bandgap heterostructures

Design optimization of multi-barrier tunneling devices using the transfer-matrix method

Modeling electron mobility in MBE-grown InAs/AlSb thin films for HEMT applications using neural networks

Electrical characterization of quad flat non-lead package for RFIC applications

Nonlinear regime of the current instability in a ballistic FET

Peltier effect induced correction to ohmic resistance

Relaxation of AlSb films grown on [001]-GaSb

Characterization of a novel GaAs-based microwave optical switch

A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation

Towards novel mid-infrared quantum well lasers based on hot electrons real-space/intervalley transfer

Electron distribution between valleys and narrowing of band gap at picosecond superluminescence in GaAs

GaAs-Ge non-planar composite epitaxial heterostructures: LPE growth and cathodoluminescence investigations

Hot electron photoluminescence - new method of the investigations of semiconductors

Modeling the effective mass and Y-junction rectifying current of carbon nanotubes

Fabrication of self-organized carbon nanotubes on si substrates using nano-template by flame synthesis technique

Electric field assisted nanoparticle assembly

Formation of silicon nanoclusters in silicate matrix using an electron beam

Origin of ferromagnetism in III-V spintronic materials

Precise tuning of the switching field in 'implantation patterned' Co/Pt multilayers

Efficient organic light emitting diodes and photodetectors

Microcavity light sources

Organic thin film transistors-electronics anywhere

Printing techniques in organic based optoelectronics

Contact resistance in pentacene thin film transistors

Contact resistance in organic thin film transistors

Nano-processing using carbon nano tube probes and its device applications

E-beam proximity control in the sub-50 nm limit

Temperature-insensitive quantum dot laser

Silicon nanowire memory using surface charging and its operation analysis by scanning Maxwell-stress microcopy (SMM)

Overview of high K gate dielectric research

Epitaxial growth of Pb(Zr(0.2)Ti(0.8))O3 on Si and its nanoscale piezoelectric properties

Metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si ferroelectric DRAM (FEDRAM) transistors with ultrathin SiN buffer and long retention

Deep-submicron CMOS process integration of HfO/sub 2/ gate dielectric with poly-si gate

Gallium nitride on silicon

III-V nitride-based two terminal devices for high power, high-frequency applications

III-nitride LED material characterization and device fabrication

Very high quality p-type Al/sub x/Ga/sub 1-x/N/GaN superlattice

A broadband GaN push-pull distributed microwave power amplifier

A self-aligned double-gate polysilicon TFT technology

Fabrication of poly-Si TFT's on glass with a novel method of back-reflecting low-temperature UV-assisted nickel-induced-crystallization

Processing techniques for vertical interconnects

Effects of underlying dielectric on boron implanted polysilicon in presence of fluorine

Dual work function metal gate CMOS transistors fabricated by Ni-Ti interdiffusion

Mechanical properties of MEMS materials

Microsystems for chemistry and energy applications

A MEMS-based programmable diffraction grating for optical holography in the spectral domain

Plasma and arc microdischarges: new avenues in microfabrication

Disposable smart microfluidic-based biochips for clinical diagnostics

Dynamic optical filtering in DWDM systems using the DMD

Modeling and limitations of AlGaN/GaN HFETs

Strain energy band engineering approach to AlN/GaN/InN heterojunction devices

Effect of photo-assisted RIE damage in GaN Schottky structures

GaN/AlGaN HEMT microwave class-E power amplifier

Resonant tunneling action in ZnO/Zn/sub 0.8/Mg/sub 0.2/O double barrier devices

Properties of self-assembled ZnO nanostructures on Si and SiO/sub 2/ wafers

Double-gate MOSFETs: performance and technology options

Radiation effects in SOI isolation oxides

Device physics considerations for SOI domino circuit design

Effective body contact in SOI devices by partial trench isolated body-tied (PTIBT) structure

Ambipolar Schottky barrier SOI MOSFETs

An efficient and accurate procedure to evaluate distortion in SOI FD MOSFET

High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET

Electrical characterization of rapid thermal oxides on Si/sub 0.887/Ge/sub 0.113/ and Si/sub 0.8811/Ge/sub 0.113/C/sub 0.0059/ alloys by capacitance-voltage and deep level transient spectroscopy techniques

Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs

Analysis of parasitic barriers formed at SiGe/Si heterojunctions due to PN junction displacement

Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs

Recent advances and future trends of InAs/GaSb superlattice for very long wavelength infrared focal plane arrays (FPAs)

Advances in mid-IR antimonide type-II W lasers

Vertical cavity photonic integrated circuits

Photonic crystal nanocavities and waveguides

Development of quantum cascade lasers for high peak output power and low threshold current density

Maturing ion-implantation technology and its device applications in SiC

Ohmic contact formation on n-type 6H-SiC using polysilicon and silicides

A study of metal-Ga ohmic metallizations to p-type 6H-SiC

Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC

Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation

Novel semiconductor device approach for finding acceptable solutions to classes of graph-based computing problems not otherwise possible

Gate leakage current simulation for nanoscale NMOSFETs with nitrided gate dielectric by Boltzmann transport equation

Electron and hole contribution to thermal noise in short-channel MOSFETs

Spacer FinFET: nano-scale CMOS technology for the terabit era

Power scaling in nanoscale ballistic MOSFET circuits

Two-terminal solid-state THz sources: state-of-the-art and novel devices

Remote detection of biomolecules in the THz region

Recent advances in AlSb/InAs HEMTs for high-speed electronics

Optical phonons in wurtzite and cubic structures

Heterostructure device on the cleaved edge of a superlattice for terahertz power generation

Design and fabrication of a novel power VJFET in 4H-SiC

Characterization and modeling of silicon-carbide power devices

Self-consistent surface mobility and interface charge modeling in conjunction with experiment of 6H-SiC MOSFETs

Mixed-mode investigation of hybrid SiC/Si cascode configurations

4H- and 6H-SiC vertical static induction transistor with p-n junction as a gate

Optical solder bumps: a modular approach to monolithic optoelectronic integration

Hybrid WDM - OTDM technologies using semiconductor optical amplifiers for networking, instrumentation and signal processing

Laser processing of materials and devices

Semiconductor diode lasers for telecommunications

Nonequilibrium quantum transport modeling in resonant tunneling photodetectors

On the extraction of oxide thickness and sub-band energy shift in thin oxide MOS capacitors with permeable gates

Comparison of symmetric and asymmetric double gate MOSFETs: tunneling currents and hot electrons

Complete RF characterisation of CMOS power transistors for low noise and high power front end amplifier design

A physical model of a CMOS varactor with high capacitance tuning range and its application to simulate a voltage controlled oscillator

High performance SOI DTMOS using a retrograde base with a low impurity surface channel

A systematic approach for multidimensional, closed-form analytic modeling: mobilities and effective intrinsic carrier concentrations in p-type Ga/sub 1-x/Al/sub x/As

Fabrication of GaAs-based integrated 2-bit half and full adders by novel hexagonal BDD quantum circuit approach

Effects of surface Fermi level pinning and surface state charging on control characteristics of nanometer scale Schottky gates formed on GaAs

Investigation of on-state breakdown in InAlAs/InGaAs HEMTs

In/sub 0.5/Ga/sub 0.5/P/In/sub 0.22/Ga/sub 0.78/As/GaAs pseudomorphic high electron mobility transistor with gate oxide layer for improving on-state and off-state breakdown voltages

InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on a GaAs substrate using InP metamorphic buffer layer

Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride

A dynamic source-drain extension (DSDE) MOSFET using a separately biased conductive spacer

Scaling effects of gate dielectric thickness on plasma charging damage in MOS devices

A compact deep-submicron MOSFET g/sub ds/ model including hot-electron and thermoelectric effects

A unified predictive TFT model with capability for statistical simulation

Effects of S/D non-overlap and high-/spl kappa/ dielectrics on nano CMOS design

III-nitride LED material characterization and device fabrication

Content Provider	IEEE Xplore Digital Library
Author	Stokes, E.
Copyright Year	2001
Description	Author affiliation: GE Corporate R&D, Schenectady, NY, USA (Stokes, E.)
Abstract	Summary form only given. Common material characterization techniques are evaluated for their ability to grade and distinguish between various sources of MOCVD grown III-nitride LED heterostructures on sapphire. in a mature semiconductor substrate technology (such as silicon), device performance would be expected to depend mostly on fabrication issues, since the characteristics of substrate material vary negligibly from vendor to vendor In an emerging material technology such as MOCVD III-nitride however, the quality of the epitaxial layers on the substrate is at least as important as the details of the fabrication process. We have used common semiconductor material characterization techniques: optical microscopy, atomic force microscopy, x-ray diffraction, time resolved photoluminescence, and transmission electron microscopy to investigate several different MOCVD-grown M-Nitride LED materials from commercial vendors and university groups. In most cases, the material characterization results depend in some way on the source of the material. We have also fabricated several different geometries and sizes of epir-up LED devices using the same set of MOCVD materials. With the aid of software simulation tools, we are currently working to correlate device performance with material characterization results.
Sponsorship	IEEE
File Size	49865
File Format	PDF
ISBN	0780374320
DOI	10.1109/ISDRS.2001.984524
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	ISDRS-Univ of Maryland
Subject Keyword	Light emitting diodes Fabrication Semiconductor materials Optical microscopy Optical materials Atomic force microscopy MOCVD Substrates Transmission electron microscopy Atom optics
Content Type	Text
Resource Type	Article

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