NDLI: Development of InP-based test structures for optical MEMS applications

Content Provider	IEEE Xplore Digital Library
Author	Pruessner, M. Grover, R. Calhoun, L. Ghodssi, R.
Copyright Year	2001
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA (Pruessner, M.)
Abstract	III-V semiconductors such as InP have a direct bandgap and thus allow active optical devices such as lasers and optical amplifiers to be realized. The monolithic integration of InP based active optical devices with MEMS actuators will enable a new generation of versatile wavelength division multiplexed (WDM) devices from lossless switches to tunable lasers and optical filters to be realized at the 1.55 /spl mu/m communications wavelength. While the electro-mechanical properties of silicon are well known,, those of InP must first be studied before InP-based optical micro-electro-mechanical systems (MEMS) can be realized. This can be done by the M-Test, which utilizes electrostatically actuated beams to obtain bending and stress parameters of thin films. An applied voltage between a beam and substrate causes the beam to bend down toward the substrate. The electrostatic force increases as 1/g/sup 2/ where g is the beam-to-substrate gap. The mechanical bending force of the beam is proportional to k(/spl Delta/g) where /spl Delta/g is the change in beam to substrate gap and k is the spring constant of the beam. The spring constant k is dependent on both material properties as well as beam geometry. Because the electrostatic and mechanical forces increase at different rates, it should be clear that an instability point exists at which the two forces no longer balance and the beam is pulled in to the substrate. This instability is known to occur at 2/3 the original beam to substrate gap. By measuring the pull in voltage for various beam geometries, Young's modulus and intrinsic stress of the beam material can be found. Both properties are fundamental for MEMS design.
Sponsorship	IEEE
Starting Page	178
Ending Page	181
File Size	464674
Page Count	4
File Format	PDF
ISBN	0780374320
DOI	10.1109/ISDRS.2001.984469
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	ISDRS-Univ of Maryland
Subject Keyword	Testing Micromechanical devices Substrates Optical filters Optical films Indium phosphide Optical devices Stimulated emission Semiconductor optical amplifiers Wavelength division multiplexing
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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