NDLI: Special effects in triple gate MOSFETs fabricated on silicon-on-insulator (SOI)

Content Provider	IEEE Xplore Digital Library
Author	Bae, Y. Na, K.-I. Cristoloveanu, S. Xiong, W. Cleavelin, C.R. Lee, J.-H.
Copyright Year	2009
Description	Author affiliation: Department of Electronics Engineering, Uiduk University, Gyeongju, South Korea (Bae, Y.) \|\| Texas Instruments, USA (Xiong, W.; Cleavelin, C.R.) \|\| Electrical Eng. and Computer Sci., Kyungpook National University, Daegu, South Korea (Lee, J.-H.) \|\| IMEP, Grenoble Polytechnic Institute, Minatec, France (Na, K.-I.; Cristoloveanu, S.)
Abstract	The typical electrical properties of triple-gate SOI MOSFETs are investigated. The relationship between the short-channel effect (SCE) and the inter-gate coupling effect is studied as a function of the channel length and width. The three-dimensional coupling effect due to electric field penetration from substrate to channel, from source and drain to body, and from lateral gates to back interface is examined systematically by considering the fin width, channel length, and back bias variations. The gate-induced floating body effect (GIFBE), which shows partially depleted (PD) device properties in the fully depleted (FD) device is documented in n- and p-channel triplegate MOSFETs.
Starting Page	51
Ending Page	56
File Size	611573
Page Count	6
File Format	PDF
ISBN	9781424444137
ISSN	1545827X
DOI	10.1109/SMICND.2009.5336612
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-12
Publisher Place	romania
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Silicon on insulator technology Threshold voltage Annealing Hydrogen Instruments Controllability Carrier confinement FinFETs Length measurement GIFBE SOI triple-gate MOSFET short-channel effect narrow fin width effect coupling effect supercoupling effect
Content Type	Text
Resource Type	Article

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