NDLI: Silicon carbide power MOSFET model and parameter extraction sequence

Content Provider	IEEE Xplore Digital Library
Author	McNutt, T. Hefner, A. Mantooth, A. Berning, D. Sei-Hyung Ryu
Copyright Year	2003
Description	Author affiliation: Arkansas Univ., Fayetteville, AR, USA (McNutt, T.)
Abstract	A compact circuit simulator model is used to describe the performance of a 2 kV, 5 A 4-H silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400 V, 5 A silicon (Si) power MOSFET. The model's channel current expressions are unique in that they include the channel regions at the corners of the square or hexagonal cells that turn on at lower gate voltages and the enhanced linear region transconductance due to diffusion in the nonuniformly doped channel. It is shown that the model accurately describes the static and dynamic performance of both the Si and SiC devices and that the diffusion-enhanced channel conductance is essential to describe the SiC DiMOSFET on-state characteristics. The detailed device comparisons reveal that both the on-state performance and switching performance at 25/spl deg/C are similar between the 400 V Si and 2 kV SiC MOSFETs, with the exception that the SiC device requires twice the gate drive voltage. The main difference between the devices is that the SiC has a five times higher voltage rating. At higher temperatures (above 100/spl deg/C), the Si device has a severe reduction in conduction capability, whereas the SiC on-resistance is only minimally affected.
Starting Page	217
Ending Page	226
File Size	702499
Page Count	10
File Format	PDF
ISBN	0780377540
ISSN	02759306
DOI	10.1109/PESC.2003.1218298
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-06-15
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide MOSFET circuits Power MOSFET Parameter extraction Threshold voltage Transconductance Capacitance Circuit simulation Immune system Power system modeling
Content Type	Text
Resource Type	Article

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