NDLI: Development and demonstration of silicon carbide (SiC) motor drive inverter modules

Content Provider	IEEE Xplore Digital Library
Author	Chang, H.-R. Hanna, E. Radun, A.V.
Copyright Year	2003
Description	Author affiliation: Rockwell Sci. Co., Thousand Oaks, CA, USA (Chang, H.-R.; Hanna, E.)
Abstract	This paper describes a new SiC-based motor drive technology used to achieve compact power conversion. The static and dynamic characterization of 600 V SiC MOS-enhanced JFETs and SiC Schottky free-wheeling diodes (FWDs) designed and fabricated at Rockwell Scientific, are performed. Single 5 A SiC JFET and Schottky FWD die with a voltage rating of 600 V are paralleled to obtain 10 A, and 25 A, current ratings. The power loss and related voltage and current stress of the SiC MOS-enhanced JFET and SiC Schottky FWD are measured and compared to that of a state-of-the-art silicon IGBTs and PIN FWDs with ratings equal to the SiC ratings. For the same power rating (25 A, 600 V), the area of the SiC die making up the inverter module are about 60% of a commercial 25 A IGBT die. The Rockwell Automation RA Model 1336 motor controller is used, with its gate drive circuit modified to control the SiC depletion-mode MOS-enhanced JFETs, to control a motor. SiC inverter modules are fabricated and used to successfully drive 1 hp to 10 hp motors. To our knowledge, this is the first time that a motor drive using SiC inverter modules has been demonstrated.
Starting Page	211
Ending Page	216
File Size	454029
Page Count	6
File Format	PDF
ISBN	0780377540
ISSN	02759306
DOI	10.1109/PESC.2003.1218297
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-06-15
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Motor drives Inverters JFETs Automatic control Voltage Insulated gate bipolar transistors Power conversion Schottky diodes Stress
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Demonstration of silicon carbide (SiC) -based motor drive

Development and demonstration of silicon carbide (SiC) inverter module in motor drive

Power electronics equipments applying novel SiC power semiconductor modules

Characteristics of the Power Electronics Equipments applying the SiC power devices

Characteristics of the power electronics equipments applying the SiC power devices

Design and testing of silicon carbide JFETs based inverter

Traction inverter that applies hybrid module using 3-kV SiC-SBDs

Comparison of Si and SiC inverters for IPM traction drive

Comparison of 1200 V silicon carbide Schottky diodes and silicon power diodes

Development and demonstration of silicon carbide (SiC) motor drive inverter modules

Similar Documents

Demonstration of silicon carbide (SiC) -based motor drive

Development and demonstration of silicon carbide (SiC) inverter module in motor drive

Power electronics equipments applying novel SiC power semiconductor modules

Characteristics of the Power Electronics Equipments applying the SiC power devices

Characteristics of the power electronics equipments applying the SiC power devices

Design and testing of silicon carbide JFETs based inverter

Traction inverter that applies hybrid module using 3-kV SiC-SBDs

Comparison of Si and SiC inverters for IPM traction drive

Comparison of 1200 V silicon carbide Schottky diodes and silicon power diodes

Development and demonstration of silicon carbide (SiC) motor drive inverter modules