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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wang, Q. Jia, R. Li, W.L. Guan, W.H. Liu, Q. Hu, Y. Long, S.B. Chen, B.Q. Liu, M. Ye, T.C. Lu, W.S. Jiang, L. |
| Copyright Year | 2007 |
| Description | Author affiliation: Inst. of Microelectron., Key Lab. of Nanofabrication & Novel Device integrated Technol., Chinese Acad. of Sci., Beijing (Wang, Q.; Jia, R.; Li, W.L.; Guan, W.H.; Liu, Q.; Hu, Y.; Long, S.B.; Chen, B.Q.; Liu, M.; Ye, T.C.) |
| Abstract | This paper demonstrates the integration of Au nanocrystals (NCs) into nonvolatile metal-oxide-semiconductor (MOS) with a hybrid method operated at room temperature. The comparison of structural and electrical characteristics between the hybrid Au NCs fabricated by chemical syntheses and film deposition Au NCs fabricated by rapid thermal annealing (RTA) was carried out. The size of the Au NCs formed by chemical method has been investigated more unique and small than the ones by the film deposition and RTA process. The electrical characteristics of MOS structure with two kinds of Au NCs has shown the larger memory window, lower P/E voltage and good retention time for the hybrid NCs due to its small diameter and low temperature process. |
| Starting Page | 938 |
| Ending Page | 941 |
| File Size | 205843 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424406074 |
| DOI | 10.1109/NANO.2007.4601338 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-08-02 |
| Publisher Place | Hong Kong |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gold Nanocrystals Films Metals Nonvolatile memory Silicon Capacitance-voltage characteristics RTA hybrid nanocrystals nonvolatile memory |
| Content Type | Text |
| Resource Type | Article |
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