NDLI: Highly thermal robust Ni-germanosilicide utilizing NiPt/Co/TiN tri-layer for CMOS application

Content Provider	IEEE Xplore Digital Library
Author	Jang-Gn Yun Soon-Young Oh Hee-Hwan Ji Bin-Feng Huang Seong-Hyung Park Heui-Seung Lee Dae-Byung Kim Ui-Sik Kim Han-Seob Cha Sang-Bum Hu Jeong-Gun Lee Hi-Deok Lee
Copyright Year	2004
Description	Author affiliation: Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea (Jang-Gn Yun; Soon-Young Oh; Hee-Hwan Ji; Bin-Feng Huang)
Abstract	Highly thermal robust Ni-germanosilicide has been developed using the novel NiPt/Co/TiN tri-layer. Ni-germanosilicide properties were characterized with different source/drain dopants and Ge concentrations for nanoscale CMOSFETs application. The sheet resistance was degraded as the Ge concentration increases in Si/sub 1-x/Ge/sub x/. Low temperature silicidation and wide range of RTP process window are achieved as well as the improvement of the thermal stability according to different dopant types by the subsequent Co and TiN capping layer above NiPt on Si/sub 1-x/Ge/sub x/.
Starting Page	26
Ending Page	28
File Size	296650
Page Count	3
File Format	PDF
ISBN	0780385365
DOI	10.1109/NANO.2004.1392238
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-08-16
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Robustness Tin Silicon germanium Germanium silicon alloys CMOS technology Silicidation Thermal stability Temperature Ultra large scale integration Annealing
Content Type	Text
Resource Type	Article

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