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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Salmer, G. |
| Copyright Year | 1996 |
| Description | Author affiliation: Institut d'Electronique et de Microélectronique, du Nord, UMR CNRS 9929, Université des Sciences et Technologies de Lille, Cite Scientifique, Avenue Poincaré, BP 69, 59652 Villeneuve d'Ascq Cedex, France. (Salmer, G) |
| Abstract | The design of microwave monolithic integrated circuits needs the availability of a large data base and accurate electrical models for active devices (FETs and HBTs). For this purpose, a global approach based on the combination of several simulation and modelling tools must be used. The elements of this continuous chain are presented, after recalling the main requirements that they must satisfy. First the main physical simulation methods of active devices are described: Monte Carlo, 2D and quasi 2D models; their respective advantages and drawbacks are discussed. Then, principle and recent progress in devices parameters extraction methods are presented. The main trends and problems in term of electrical models are summarized and typical examples of recent applications are given. |
| Starting Page | 735 |
| Ending Page | 742 |
| File Size | 11466662 |
| Page Count | 8 |
| File Format | |
| DOI | 10.1109/EUMA.1996.337685 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-09-06 |
| Publisher Place | Czech Republic |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Integrated circuit modeling Design optimization Microwave devices Monolithic integrated circuits Integrated circuit technology HEMTs MMICs Circuit simulation Predictive models Microwave technology |
| Content Type | Text |
| Resource Type | Article |
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