NDLI: 51 GHz frontend with flip chip and wire bond interconnections from GaAs MMICs to a planar patch antenna

Content Provider	IEEE Xplore Digital Library
Author	Baumann, G. Richter, H. Baumgartner, A. Ferling, D. Heilig, R. Hollmann, D. Muller, H. Nechansky, H. Schlechtweg, M.
Copyright Year	1995
Description	Author affiliation: Alcatel SEL AG, Pforzheim, Germany (Baumann, G.)
Abstract	In this paper the difference between flip chip and wire bond technology is demonstrated. Test assemblies with coplanar waveguides have been attached in flip chip and wire bond technology and measured up to 75 GHz. Further, the influence of a metallic lid on a coplanar waveguide structure is examined. To compare flip chip and wire bond interconnections, 51 GHz frontends with GaAs devices in coplanar waveguide technology have been realized. In one frontend the low noise amplifier (LNA) is connected to a planar patch antenna by wire bonding and in a second one by flip chip attachment. RF evaluations show the clear advantage of the flip chip version due to the lower insertion loss of the flip chip interconnections and the higher flexibility of mounting the MMICs directly on the back structure of the planar patch antenna, leading to reduced losses of the feedline.
Starting Page	1639
Ending Page	1642
File Size	504123
Page Count	4
File Format	PDF
ISBN	0780325818
ISSN	0149645X
DOI	10.1109/MWSYM.1995.406291
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Flip chip Wire Bonding Coplanar waveguides Patch antennas Testing Assembly Waveguide components Semiconductor device measurement Gallium arsenide
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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