NDLI: A study of Class C operation of GaAs power HBTs

Content Provider	IEEE Xplore Digital Library
Author	Ali, F. Gupta, A. Salib, M. Veasel, B.
Copyright Year	1995
Description	Author affiliation: Adv. Technol. Div., Westinghouse Electr. Corp., Baltimore, MD, USA (Ali, F.; Gupta, A.; Salib, M.; Veasel, B.)
Abstract	GaAs power HBTs are traditionally biased in Class A or Class AB mode for power amplifiers. This paper describes the tradeoffs of operating these devices in Class C bias. We find that power-added efficiency (PAE) improves and power gain decreases in Class C when compared to Class AB bias. At 6 GHz, the PAE increased by greater than 10 percentage points (from 68.9% in Class AB to 80.6% in Class C) with concurrent loss of 4.3 dB in power gain. The efficiency improves monotonically with lower operating frequency. In a single-tone environment, the second harmonic increases by /spl sim/7 dB in Class C over Class AB. To our knowledge, this is the first report on the experimental study of Class C operation of GaAs HBTs.
Starting Page	721
Ending Page	724
File Size	242298
Page Count	4
File Format	PDF
ISBN	0780325818
ISSN	0149645X
DOI	10.1109/MWSYM.1995.406006
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Radiofrequency amplifiers Power amplifiers Radio frequency MESFETs Power supplies Tuners Breakdown voltage Fingers
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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