NDLI: Field theory analysis of distributed microwave effects in high speed semiconductor lasers and their interconnection with passive microwave transmission lines

Content Provider	IEEE Xplore Digital Library
Author	Vahldieck, R. Shuoqi Chen Hang Jin Russer, P.
Copyright Year	1995
Description	Author affiliation: Lab. for Lightwave Electron., Microwaves & Commun., Victoria Univ., BC, Canada (Vahldieck, R.; Shuoqi Chen; Hang Jin)
Abstract	This paper present a rigorous field theory analysis of the distributed microwave effects in high speed semiconductor lasers by using a combination of a self-consistent complex finite difference method with the frequency-domain TLM method (FDTLM). The semiconductor laser is treated as a lossy multilayer slow-wave microstrip transmission line. The conductivity profile in the active layer is obtained by a self-consistent solution of the nonlinear semiconductor device equations. The attenuation factor, phase velocity and characteristic impedance of the semiconductor laser are presented for the unbiased and forward-biased case and compared with experimental results. On the basis of this analysis we present the interconnection effects between passive microwave transmission lines and laser diodes using airbridge or flip-chip transitions.
Starting Page	861
Ending Page	864
File Size	370678
Page Count	4
File Format	PDF
ISBN	0780325818
ISSN	0149645X
DOI	10.1109/MWSYM.1995.405911
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-05-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microwave theory and techniques Semiconductor lasers Masers Laser theory Transmission line theory Finite difference methods Frequency domain analysis Propagation losses Nonhomogeneous media Microstrip
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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