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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yamamoto, T. Kitahara, T. Hiura, S. |
| Copyright Year | 2006 |
| Description | Author affiliation: Corporate Manuf. Eng. Center, Toshiba Corp., Yokohama (Yamamoto, T.; Kitahara, T.; Hiura, S.) |
| Abstract | In this paper, we describe the design of a 60-W Doherty amplifier at a frequency band of 1.8 GHz. The 60-W Doherty amplifier is composed of two 190-W continuous wave (CW) output power laterally diffused metal-oxide semiconductor (LDMOS) devices. To improve the linearity and efficiency of the 60-W Doherty amplifiers, the impedance matching circuits of the carrier amplifier and peaking amplifier were optimized using a high-frequency circuit design simulator and a system simulator. Experimental results using one-carrier wide-band code division multiple access (W-CDMA) signals achieved a 33% drain efficiency and a -36 dBc adjacent channel leakage power ratio (ACLR) at a 5-MHz offset in the frequency band range of 1844.9 MHz to 1879.9 MHz. The electrical performance for two-carrier W-CDMA signals was also measured. This is a report on the highest power of a Doherty amplifier at a frequency band of 1.8 GHz to the best of the authors' knowledge |
| Starting Page | 1352 |
| Ending Page | 1355 |
| File Size | 3932347 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780395417 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2006.249500 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Multiaccess communication Broadband amplifiers Frequency Power amplifiers Circuit simulation Semiconductor optical amplifiers Power generation MOS devices Linearity Impedance matching wide-band code division multiple access (W-CDMA) Doherty amplifier adjacent channel leakage power ratio (ACLR) laterally diffused metal-oxide semiconductor (LDMOS) |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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