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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nanlei Larry Wang Wenlong Ma Sarah Xu Camargo, E. Xiaopeng Sun Hu, P. Zhuang Tang Hin-Fai Frank Chau Amelia Chen Lee, C.P. |
| Copyright Year | 2006 |
| Description | Author affiliation: WJ Commun., San Jose, CA (Nanlei Larry Wang; Wenlong Ma; Sarah Xu; Camargo, E.; Xiaopeng Sun; Hu, P.; Zhuang Tang; Hin-Fai Frank Chau; Amelia Chen) |
| Abstract | This paper reports on the improvement of a previously developed InGaP/GaAs HBT for 24-28V linear power operation. The improvements achieved were: application of dynamic bias circuit which improves the ACLR under WCDMA modulation; modification of device technology improving ruggedness to sustain 10:1 VSWR at 30V collector bias under P1dB driving conditions and over 6 dB of gain compression; maintenance of lifetime and reliability simultaneously. Building blocks of HBT were strung together for higher power and good scaling of performance was achieved supporting the validity of the layout approach and the thermal design. Devices delivering $P_{1dB}$ equiv 8W under CW conditions provided ACLR equiv -50 dBc at 8.5 dB back-off and 16% efficiency for WCDMA signal (PARequiv8.7 dB) at 2.14 GHz. Lifetime test over 3000 hours was repeated for 28V bias and 0.05mA/mum2 current density at 315 degree C junction temperature. Therefore, the InGaP/GaAs HBT technology is mature now for the high linearity power amplification |
| Starting Page | 881 |
| Ending Page | 884 |
| File Size | 4343137 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780395417 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2006.249833 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Heterojunction bipolar transistors Multiaccess communication Circuits Gain Maintenance Lifetime estimation Current density Temperature Linearity power amplifiers Heterojunction bipolar transistor power bipolar amplifiers interchannel interference |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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