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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Inoue, A. Amasuga, H. Goto, S. Kunii, T. Wong, M.R. del Alamo, J.A. Oku, T. Ishikawa, T. |
| Copyright Year | 2006 |
| Description | Author affiliation: High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Itami (Inoue, A.; Amasuga, H.; Goto, S.; Kunii, T.) |
| Abstract | A millimeter wave high power PHEMT model with a nonlinear drain resistance Rd is proposed. The nonlinear Rd arises from electron velocity saturation in the gate-drain gap. At 2.1 GHz, the nonlinear Rd behaves like a conventional linear resistor. However, at Ka band, the nonlinearity of the resistance results in a large power loss. This frequency dependent phenomenon has been experimentally verified in millimeter-wave GaAs PHEMTs. Our proposed simple model accurately describes the power characteristics of these devices at 2.1 GHz and in Ka band |
| Starting Page | 647 |
| Ending Page | 650 |
| File Size | 3815470 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780395417 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2006.249697 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | PHEMTs Electric resistance Millimeter wave transistors Frequency dependence Electrons Millimeter wave technology Optical amplifiers Power amplifiers Solid modeling Gallium arsenide Millimeter wave amplifiers Modeling FETs |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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