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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Therrien, R. Singhal, S. Chaudhari, A. Nagy, W. Marquart, J. Johnson, J.W. Hanson, A.W. Riddle, J. Rajagopal, P. Preskenis, B. Zhitova, O. Willamson, J. Kizilyalli, I.C. Linthicum, K.J. |
| Copyright Year | 2006 |
| Description | Author affiliation: Nitronex Corp., Raleigh, NC (Therrien, R.; Singhal, S.; Chaudhari, A.; Nagy, W.; Marquart, J.; Johnson, J.W.; Hanson, A.W.; Riddle, J.; Rajagopal, P.; Preskenis, B.; Zhitova, O.; Willamson, J.; Kizilyalli, I.C.; Linthicum, K.J.) |
| Abstract | AlGaN/GaN HFETs on Si substrates are tested under OFDM modulations and show excellent performance from 3.3GHz to 3.8GHz. Performance on an 8mm device (NPT35010) in power small outline package (PSOP2) shows 1.5W output power, 11.2dB gain, 28.6% drain efficiency and 2% EVM at 3.5GHz. Large periphery 36mm devices were mounted in ceramic packages (NPT35050) and showed greater than 7W output power, > 11dB gain, 27.2% drain efficiency and 2% EVM at 3.5 GHz. Additionally data was taken across process from 23 devices and 5 process lots to demonstrate repeatability. Finally the same RF data was collected over flange temperature from -40degC to +85degC and demonstrated stable performance over temperature. These results demonstrate the potential for GaN-on-Si HEMTs for use in WiMAX applications |
| Starting Page | 710 |
| Ending Page | 713 |
| File Size | 3464795 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780395417 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.2006.249732 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Aluminum gallium nitride Gallium nitride HEMTs MODFETs WiMAX Packaging Power generation Temperature Testing OFDM modulation RF power transistors AlGaN/GaN HFETs GaN high electron mobility transistors (HEMTs) linearity |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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