NDLI: Dual gate oxide charging damage in damascene copper technologies

Content Provider	IEEE Xplore Digital Library
Author	Stamper, A.K. Chou, A. Hook, T.B.
Copyright Year	2000
Description	Author affiliation: IBM Microelectron., Essex Junction, VT, USA (Stamper, A.K.)
Abstract	Due to growing integrated circuit (IC) performance requirements, dual-gate oxide thickness and damascene-copper wiring are increasingly being employed by the IC industry. Charging damage behavior for 0.22-micron (3.5-nm oxide), 0.18-micron (2.7-nm/3.8-nm oxide), and 0.16-micron (3.5-nm/6.8-nm oxide) generation damascene-copper wiring technologies has been investigated. Charging damage manifests itself in four areas: elevated gate-oxide leakage currents, threshold voltage shifts, increased hot-carrier sensitivity, and early gate-oxide dielectric breakdown. The PFET devices generally displayed higher gate-oxide leakage currents, threshold-voltage shifts, and hot-carrier sensitivity than the NFET devices. For the dual-gate oxide thickness technologies, the thick oxide was more susceptible to charging damage than the thin oxide for a given oxide thickness. The thicker of the two oxides in the dual-gate oxide thickness technologies was invariably found to be more susceptible to charging damage, even when an oxide of that same thickness was damage-free in a single oxide-thickness technology. Charging damage had no measurable effect on the gate-oxide breakdown voltage distribution, although the NFET devices had more early breakdown voltage fails than the PFET devices.
Starting Page	109
Ending Page	112
File Size	381260
Page Count	4
File Format	PDF
ISBN	0965157741
DOI	10.1109/PPID.2000.870629
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Copper CMOS technology Wiring Integrated circuit technology Leakage current Threshold voltage Etching Chemical vapor deposition Electron traps Hot carriers
Content Type	Text
Resource Type	Article

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