NDLI: Bias-plasma interaction in pulsed plasmas and its relation to damage mechanisms

Content Provider	IEEE Xplore Digital Library
Author	Malyshev, M.V. Donnelly, V.M.
Copyright Year	2000
Description	Author affiliation: Lucent Technol. Bell Labs., Murray Hill, NJ, USA (Malyshev, M.V.)
Abstract	We report results of a study of the behavior of a chlorine, inductively-coupled pulsed plasma operated with a continuous radio frequency (rf) bias applied to the wafer stage. If applied rf bias power is not too low, its presence when the source power is turned off, causes a drastic change in electron temperature (T/sub e/). During the first 20-30 /spl mu/s of the OFF time T/sub e/ in the presence of the bias (T/sub e//sup bias/) decays as does T/sub e/ without bias (T/sub e//sup nb/). Then, however, after reaching a minimum (/spl sim/0.5 eV), T/sub e//sup bias/ starts to increase rapidly and reaches values even higher than the steady state ON time values. Since the electron density (n/sub e/) is still quite high when T/sub e//sup bias/ goes through the minimum, the sheath near the wafer does not collapse and negative ions do not reach the wafer. In a separate study in a similar reactor, the damage was reduced while operating with a pulsed source and a continuous bias. This implies that the discharging of the wafer occurs not by negative ions. We further show that increasing the duration of the OFF time or increasing the bias power can lead to the transition of the plasma into reactive ion etching (RIE) mode. This occurs when the decaying positive ion density (n/sub i//sup +/) reaches the level of ion density of pure RIE.
Starting Page	18
Ending Page	21
File Size	382217
Page Count	4
File Format	PDF
ISBN	0965157741
DOI	10.1109/PPID.2000.870573
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Plasma applications Plasma temperature Plasma density Electrons Plasma waves Plasma materials processing Plasma measurements Pulse modulation Broadband antennas Plasma sources
Content Type	Text
Resource Type	Article

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