NDLI: A comprehensive assessment of contact oxide etch damage using device monitor and in-line noncontact testing

Content Provider	IEEE Xplore Digital Library
Author	Gupta, L.J. Horner, G.S.
Copyright Year	2000
Description	Author affiliation: Dept. of Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA (Gupta, L.J.)
Abstract	We report here a direct correlation between a Keithley Quantox in-line tester and full-flow device monitors for contact oxide etch damage. Gate leakage measured with the device monitor were used to choose the least damaging of four oxide etchers. The same ranking was confirmed using Quantox flatband voltage measurements, but with a much faster turnaround time. Also, the Quantox capabilities were used to isolate the primary contributors of damage in one particular reactor, and the resulting reduction in damage was confirmed with the test monitors. The capability to quickly isolate specific portions of a recipe is demonstrated here, and it is subsequently confirmed with the full-flow device monitor. The advantage of using this technique in conjunction with a full-flow device monitor results in a much faster turn around for isolation of plasma damage.
Starting Page	73
Ending Page	76
File Size	334692
Page Count	4
File Format	PDF
ISBN	0965157741
DOI	10.1109/PPID.2000.870599
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Etching Monitoring Testing Inductors Plasma applications Plasma devices Gate leakage Instruments Voltage Antenna measurements
Content Type	Text
Resource Type	Article

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