NDLI: Plasma-induced defect generation on silicon surfaces in HDP-CVD processing

Content Provider	IEEE Xplore Digital Library
Author	M'Saad, H. Desai, S. Witty, D. Hamon, C. Seon-Mee Cho Moghadam, F.
Copyright Year	2000
Description	Author affiliation: Appl. Mater. Inc., Santa Clara, CA, USA (M'Saad, H.)
Abstract	The impact of the HDP-CVD process on Si surfaces has been studied. It has been shown that the sputter component in the process enhances the features and the detection of Si surface defects. These defects, 0.16-0.30 /spl mu/m in size, are correlated to other characterization techniques such as capacitance-voltage measurements, plasma damage monitoring, and photoconductance decay spectroscopy. We show that these defects are a result of the interaction between the energetic ions in the deposition process and the crystal-originated voids during the Czochralski crystal growth. We show how these defects can be modulated among different processing conditions. The learning has been applied to optimizing the initial steps of plasma deposition in the HDP-CVD process for shallow trench isolation and pre-metal dielectric applications. This work also underscores the importance of applying low information content sensors to the early detection and control of plasma damage in high density plasma applications.
Starting Page	42
Ending Page	45
File Size	639877
Page Count	4
File Format	PDF
ISBN	0965157741
DOI	10.1109/PPID.2000.870591
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-22
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Silicon Plasma materials processing Plasma applications Plasma measurements Plasma density Computer vision Capacitance-voltage characteristics Capacitance measurement Size measurement Photoconductivity
Content Type	Text
Resource Type	Article

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