NDLI: Effect of low temperature deuterium annealing on plasma process induced damage

Content Provider	IEEE Xplore Digital Library
Author	Lee, S.H. Kim, Y.K. Lee, Y.H. Kang, H.S. Ahn, C.G. Kang, B.K. Jinju Lee Kangguo Cheng Zhi Chen Hess, K. Lyding, J.W.
Copyright Year	1999
Description	Author affiliation: ASIC Div., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea (Lee, S.H.)
Abstract	The effects of low temperature deuterium annealing on plasma process induced damage were examined for devices with a thin gate oxide. The devices were exposed to the plasma during poly-Si gate or metal processes, and the device characteristics were monitored by charge pumping and current-voltage measurements. It was observed that the metal process induced more plasma damage than the poly-Si gate process. The deuterium (D/sub 2/) annealing had little effect on oxide damage, but it was very effective in reducing the interface damage. After D/sub 2/ annealing, the devices showed a very low level of interface states, and the strength to withstand electrical stress was also enhanced. To maximize D/sub 2/ annealing effects, it is suggested that the D/sub 2/ annealing should be conducted without any H/sub 2/ annealing.
Starting Page	188
Ending Page	191
File Size	250233
Page Count	4
File Format	PDF
ISBN	0965157733
DOI	10.1109/PPID.1999.798845
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Plasma temperature Deuterium Annealing Plasma measurements Plasma properties Plasma devices Monitoring Charge pumps Current measurement Charge measurement
Content Type	Text
Resource Type	Article

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