NDLI: A study of effects of plasma-induced charging damage on hot-carrier lifetime using pre-stressed data

Content Provider	IEEE Xplore Digital Library
Author	Bhuva, B. Mongkolkachit, P. Bui, N. Kerns, S.
Copyright Year	1999
Description	Author affiliation: Dept. of EECE, Vanderbilt Univ., Nashville, TN, USA (Bhuva, B.)
Abstract	The hot-carrier response of a device is an accurate measure of the gate oxide integrity. Differences in hot-carrier lifetimes for plasma etched devices depend on the tunneling current (and the resultant changes in charge trap density) in the oxide during etch. The pre-stress device parameters are a strong function of the active charge traps in the oxide. Thus, pre-stress device parameters can be used to estimate the post-hot-carrier-stress response of plasma-etched devices. Our study, using LDD MOSFETs, shows a linear relationship between pre-stress and post-stress device characteristics. Thus, post-stress behavior of plasma-etched devices can be predicted from pre-stress data, simplifying wafer-level reliability and device characterization.
Starting Page	69
Ending Page	72
File Size	231805
Page Count	4
File Format	PDF
ISBN	0965157733
DOI	10.1109/PPID.1999.798815
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Hot carriers Hot carrier effects Plasma applications Plasma devices Plasma density Plasma measurements Etching Plasma properties Tunneling MOSFETs
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

A study of effects of plasma-induced charging damage on hot-carrier lifetime using pre-stressed data