NDLI: The sensitivity of electron shading damage to electron temperature, electron density and the plasma-to-wafer electron energy threshold

Content Provider	IEEE Xplore Digital Library
Author	Yamartino, J.M. Loewenhardt, P.K. Kenlin Huang Hui Chen Paterson, A.M. Yan Ye Helmsen, J.J.
Copyright Year	1999
Description	Author affiliation: Appl. Mater. Inc., Santa Clara, CA, USA (Yamartino, J.M.)
Abstract	The electron temperature, T/sub e/, is a well known critical parameter affecting electron shading damage (ESD). This parameter is considered important because the damaging part of the electron density comes from high energy tail of the electron energy distribution. As the size of the high energy tail is dependent upon T/sub e/, obtaining low T/sub e/ in plasma processing is considered an important approach to reducing ESD. Recent results in metal etching (Tokashiki et al., 1998) suggest that ESD not only depends on T/sub e/ as previously suspected but also that the electron density, n/sub e/, may play an important role. We introduce a new parameter, the electron energy threshold, and demonstrate that it may be as important as T/sub e/ or n/sub e/ in the mechanism for electron shading damage. This new parameter, E/sub th/, is the energy threshold for electrons to reach the wafer surface and is related to the plasma potential as well as the wafer DC bias. This threshold aspect of electron shading damage could explain why a particular class of recipes (high bias power/low source power) show improved damage performance in inductively coupled plasma (ICP) etching tools (Tokashiki et al, 1998; Tabara, 1997; Hashimoto et al., 1997; Karzhavin and Wu, 1998). In addition, we provide experimental evidence obtained on an Applied Materials DPS Metal Etch Centura which supports this explanation.
Starting Page	33
Ending Page	36
File Size	197958
Page Count	4
File Format	PDF
ISBN	0965157733
DOI	10.1109/PPID.1999.798802
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	Electrons Temperature sensors Electrostatic discharge Plasma applications Etching Plasma temperature Plasma materials processing Plasma sources Probability distribution Tail
Content Type	Text
Resource Type	Article

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