NDLI: Resistive interconnection localization

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Resistive interconnection localization

Content Provider	IEEE Xplore Digital Library
Author	Cole Jr., E.I. Tangyunyong, P. Hawkins, C.F. Bruce, M.R. Bruce, V.J. Ring, R.M. Wan-Loong Chong
Copyright Year	2002
Description	Author affiliation: Sandia Nat. Lab., Albuquerque, NM, USA (Cole, E.I., Jr.; Tangyunyong, P.)
Abstract	Resistive interconnection localization (RIL) is a new scanning laser microscope analysis technique that directly and rapidly localizes defective IC vias, contacts, and conductors from the front side and backside. RIL uses a scanned laser to produce localized thermal gradients in IC interconnections during functional testing. A change in the pass/fail state with localized heating of the IC identifies the failing site. The technique reduces the time to locate a resistive via from months to minutes. The sources of defective vias, the physics of RIL signal generation, and examples of RIL analysis are presented.
Starting Page	15
Ending Page	21
File Size	1325720
Page Count	7
File Format	PDF
ISBN	0780374169
DOI	10.1109/IPFA.2002.1025604
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-07-12
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical microscopy Failure analysis Optical imaging Conductors Laser theory Heating Physics Testing Contacts Chemical analysis
Content Type	Text
Resource Type	Article

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