NDLI: Mobility, recombination kinetics, and solar cell performance

Content Provider	IEEE Xplore Digital Library
Author	Fortmann, C.M. Fischer, D.
Copyright Year	1993
Description	Author affiliation: Inst. de Microtechnol., Neuchatel Univ., Switzerland (Fortmann, C.M.; Fischer, D.)
Abstract	In order to optimize the amorphous silicon solar cell structure for improved stabilized performance it is necessary to understand a great number of material parameters as they exist in the solar cell under operating conditions. Towards the goal of using the solar cells themselves for quantitative defect analysis, the authors show that the short wavelength quantum efficiency measurement is a means to determine the total density of charged and uncharged dangling bonds in the i-layer as a function of light soaking time. The compound effect that dangling bond defects have on solar cell performance, consisting of the redistribution of the electric fields and decreased lifetimes are considered. The magnitude of the short wavelength response can be directly linked to the number of bulk defects in the solar cells. Also it is not possible to directly determine the electron mobility from solar cell characterization due to the diffusive carrier transport found in amorphous materials. Surprisingly, the electron mobility is not expected to be directly linked to the stability of the solar cells.
Starting Page	966
Ending Page	970
File Size	482085
Page Count	5
File Format	PDF
ISBN	0780312201
DOI	10.1109/PVSC.1993.347089
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-05-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Kinetic theory Photovoltaic cells Electron mobility Radiative recombination Amorphous silicon Density measurement Current measurement Time measurement Wavelength measurement Amorphous materials
Content Type	Text
Resource Type	Article

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