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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pearsall, N.M. Robson, N. Thomas, H. Luo, J.K. Hardingham, C.M. Cross, T.A. |
| Copyright Year | 1993 |
| Description | Author affiliation: Newcastle Photovoltaics Applications Centre, Northumbria Univ., Newcastle Upon Tyne, UK (Pearsall, N.M.; Robson, N.) |
| Abstract | Changes in the performance of epitaxial InP homojunction solar cells after irradiation and annealing are discussed, for 1 MeV electron and 1 MeV proton irradiation. Material samples have been investigated in order to characterise the irradiation induced defects. Admittance spectroscopy has identified a defect, HD1, which cannot be observed by DLTS and which is believed to influence carrier concentration in the p-type material. The relationship of the defect characterisation to thermal annealing of the cells, both at room and elevated temperature, is considered. |
| Starting Page | 1442 |
| Ending Page | 1447 |
| File Size | 606578 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780312201 |
| DOI | 10.1109/PVSC.1993.346904 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1993-05-10 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Annealing Indium phosphide Photovoltaic cells Electrons Protons Temperature Testing Indium gallium arsenide Particle beams Systems engineering and theory |
| Content Type | Text |
| Resource Type | Article |
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