NDLI: Large area GaInP/sub 2GaAs tandem cell development for space power systems

Content Provider	IEEE Xplore Digital Library
Author	Chiang, P.K. Vijayakumar, P.S. Cavicchi, B.T.
Copyright Year	1993
Description	Author affiliation: Spectrolab Inc., Sylmar, CA, USA (Chiang, P.K.; Vijayakumar, P.S.; Cavicchi, B.T.)
Abstract	The authors report the successful fabrication of single junction GaInP/sub 2/ cells with an excellent uniformity in cell performance across 2" wafers. An average efficiency of 15.1% (with the best cell efficiency at 15.3%) under 1 sun AM0 illumination have been demonstrated on total tested areas of more than 15 cm/sup 2/. They also report electron radiation experiment results using 0.7, 1.0 and 2.0 MeV energies at fluences as high as 1/spl times/10/sup 16/ cm/sup -2/. The results indicate excellent resistance in GaInP/sub 2/ cells. The damage coefficients of GaInP/sub 2/ single junction cell deduced from this experiment, have been used to further refine the prediction for the performance of the tandem cell. The results indicate that the GaInP/sub 2GaAs tandem cell is capable of producing a minimum average cell efficiency over 25% (AM0, 28/spl deg/C) at the beginning-of-life (BOL) with more than 82% remaining power after 1/spl times/10/sup 15/ cm/sup -2/, 1 MeV electron irradiation.
Starting Page	659
Ending Page	664
File Size	430014
Page Count	6
File Format	PDF
ISBN	0780312201
DOI	10.1109/PVSC.1993.347014
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-05-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power systems Gallium arsenide Electrons Space technology Testing MOCVD Surface morphology Lattices Sun Lighting
Content Type	Text
Resource Type	Article

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