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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jun-Chul Park Chan-Sei Yoo Wonshil Kang Dongsu Kim Jong-Gwan Yook Woo Sung Lee |
| Copyright Year | 2011 |
| Description | Author affiliation: Department of Electrical and Electronics Engineering, Yonsei University, #134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea (Jong-Gwan Yook) || Electronic Materials & Device Research Center, Korea Electronics Technology Institute (KETI), #68 Yatap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do 463-816, Korea (Jun-Chul Park; Chan-Sei Yoo; Wonshil Kang; Dongsu Kim; Woo Sung Lee) |
| Abstract | This paper presents a high efficiency push-pull inverse class-F $(class-F^{-1})$ power amplifier (PA) using a gallium nitride (GaN) transistor for class-S system - a digitally controlled by delta-sigma modulation. To enhance a drain efficiency of $class-F^{-1}$ PA, the chip-on-board (COB) technique, which can reduce the external parasitic components of the packaged transistor and allow fast switching operation at high frequencies by minimizing distortion of the pulse waveform, is adopted. A harmonic control circuit considering output intrinsic parameters of the transistor from switch-based model controls harmonics to extract pure fundamental frequency of the output signal. For a high efficiency push-pull operation, low loss rat-race baluns are integrated at input and output circuits. From the measured results for a continuous wave of 3.3 GHz, the $class-F^{-1}$ PA shows a maximum output power of 35.5 dBm and a power gain of about 10 dB. Also, the proposed PA provides a high power-added-efficiency (PAE) of 64.2% and a drain efficiency of 77.2% at maximum output power. The drain efficiency is still remained over 75% in the frequency range of 100 MHz |
| Starting Page | 522 |
| Ending Page | 525 |
| File Size | 646454 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457720345 |
| e-ISBN | 9780858259744 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-05 |
| Publisher Place | Australia |
| Access Restriction | Subscribed |
| Rights Holder | Institution of Engs Australi |
| Subject Keyword | Harmonic analysis Transistors Impedance matching Power amplifiers Integrated circuit modeling Gallium nitride Switching circuits push-pull structure Class-S gallium nitride (GaN) inverse class-F |
| Content Type | Text |
| Resource Type | Article |
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