NDLI: Experimental results of active and passive isolation techniques for multiple K-band LC-oscillators on silicon ICs

Content Provider	IEEE Xplore Digital Library
Author	Soliman, Y. Mason, R.
Copyright Year	2011
Description	Author affiliation: Electronics Department, Carleton University, Ottawa, Ontario, Canada K1S 5B6 (Soliman, Y.; Mason, R.)
Abstract	Measurement results of techniques for isolating multiple K-band oscillators on silicon are reported. Implemented in a 130 nm CMOS process, the experimental results of two 21 GHz oscillators show the validity of the adopted techniques. A measured worst-case spectrum leakage level of −77 dBm is reported between two identical VCOs when independently injection-locked to ninth sub-harmonic tones. De-embedding efforts showed that the lateral coupling between the RF probes dominated the enclosed results during measurements and further suggest that the achieved isolation levels are better than those reported. The reported phase noise of −107.17 dBc/Hz at 1MHz offset, the absence of inter-injection locking phenomena and the ability to steer the phases of each oscillator independently attest to the successful isolation levels achieved. It is believed that these results are the best reported isolation levels for oscillator circuits operating at K-Band on silicon and are reported herein due to the foreseen need to realize multiple independently running RF/millimeter-wave VCO's on a single chip in future IC's.
Starting Page	339
Ending Page	342
File Size	338030
Page Count	4
File Format	PDF
ISBN	9781457720345
e-ISBN	9780858259744
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-12-05
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institution of Engs Australi
Subject Keyword	Couplings Substrates Voltage-controlled oscillators Probes Harmonic analysis Silicon
Content Type	Text
Resource Type	Article

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