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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kawasaki, K. Tanigawa, K. Fujiwara, K. |
| Copyright Year | 2006 |
| Description | Author affiliation: Sendai Nat. Coll. of Technol., Sendai (Kawasaki, K.) |
| Abstract | Temperature dependence of the photocurrent (PC) intensity has been experimentally investigated as a function of reverse bias in high quality $In_{0.1}Ga_{0.9}As/A_{0.15}Ga_{0.85}As$ multiple quantum wells (MQW) in a p-i-n diode configuration. PC features show unusual behaviors at low temperatures, especially at 15 K, such as (1) the PC intensity increase with the electric field under low field conditions at 15 K and (2) a reduction up to 60 K and a rise above 60 K, while the PC intensity under high field conditions decreases with temperature. These unusual PC features under low field conditions at low temperatures are explained by considering exciton ionization, the thermal population and the tunneling probability. |
| Starting Page | 302 |
| Ending Page | 304 |
| File Size | 1290335 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424405770 |
| DOI | 10.1109/COMMAD.2006.4429942 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-12-06 |
| Publisher Place | Australia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Tunneling Photoconductivity Quantum well devices Temperature P-i-n diodes Electrodes Radiative recombination Excitons Optical sensors Absorption tunneling multiple quantum well photocurrent |
| Content Type | Text |
| Resource Type | Article |
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