NDLI: Blue InGaN/GaN-based Quantum Electroabsorption Modulators

Content Provider	IEEE Xplore Digital Library
Author	Sari, E. Nizamoglu, S. Ozel, T. Demir, H.V.
Copyright Year	2006
Description	Author affiliation: Bilkent Univ., Ankara (Sari, E.)
Abstract	We introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ~5 nm thick $In_{0.35}Ga_{0.65}N/GaN$ quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical absorption coefficient change of ~6000 $cm^{-1}$ below the band edge at highly transmissive, blue region (at $lambda_{peak}=424$ nm) with a 6 V swing and emits blue light (at $lambda_{peak}=440$ nm) with an optical output power of 0.35 mW at a 20 mA current injection level. Unlike infrared III-V quantum modulators, this blue modulator shows a blue shift in its electroabsorption (for lambda < 418 nm) with increasing applied field accross it, due to high alternating polarization fields in its quantum structures; this electroabsorption behavior is opposite to the conventional quantum confined Stark effect that features common red shift. This device holds great promise for > 10 GHz optical clock injection directly into silicon CMOS chips in the blue because of its low parasitic in-series resistance (< 100 Omega) and the possibility to make smaller device mesas for low capacitance (1.2 fF for a 10 mum x 10 mum mesa size). Considering high-speed operation and high responsivity of silicon-on-insulator (SOI) photodetectors in the blue range, unlike in the infrared, this approach eliminates the need for on-chip hybrid integration of Si CMOS with III-V photodetectors. Furthermore, the efficient electroluminescence of this device makes it feasible to consider on-chip blue laser-modulator integration for a compact optical clocking scheme.
Starting Page	18
Ending Page	20
File Size	216441
Page Count	3
File Format	PDF
ISBN	9781424405770
DOI	10.1109/COMMAD.2006.4429867
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-12-06
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical devices High speed optical techniques Stimulated emission Optical modulation III-V semiconductor materials Clocks Photodetectors Gallium nitride Absorption Power generation GaN, InGaN modulator electroabsorption quantum structure
Content Type	Text
Resource Type	Article

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