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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Philip, M. O'Neill, A. |
| Copyright Year | 2006 |
| Description | Author affiliation: NGEE ANN POLYTECH., Singapore (Philip, M.) |
| Abstract | There is a great deal of interest in silicon carbide (SiC) as an electronics material for high-voltage, high-power and high-temperature applications. Device simulation using Technology Computer Aided Design (TCAD) tools has proven to be an especially valuable tool in the study of SiC devices due to the inherent difficulties that exist in fabricating samples and the enormous cost of substrates. It is important to employ accurate TCAD models and material parameters to ensure credible and meaningful simulation results. This paper provides details of a calibration exercise of 4H-SiC TCAD models and parameters against published data. A Ti/4H-SiC Schottky Barrier Diode (SBD) reported in the literature was modeled and simulated using the Silvaco commercial TCAD simulation tool. The simulated IV characteristic was compared to the published data. The models and parameters were fine-tuned to produce a better fit. The exercise was extended from 300 K to 400 K and 473 K. After fine-tuning, there is excellent agreement between the simulated and published data. A modified Norde function was used to extract various device parameters like the ideality factor, barrier height, and the Richardson Constant for electrons. The extracted values showed good agreement with the published data. |
| Starting Page | 137 |
| Ending Page | 140 |
| File Size | 296612 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424405770 |
| DOI | 10.1109/COMMAD.2006.4429899 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-12-06 |
| Publisher Place | Australia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Calibration Silicon carbide Data mining Application software Computational modeling Computer simulation Costs Schottky barriers Schottky diodes Electrons parameter extraction silicon carbide 4H-SiC TCAD Schottky Barrier Diode Norde Function |
| Content Type | Text |
| Resource Type | Article |
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