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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | In-Ho Im Jin-Sub Park Minegishi, T. Seung-Hwan Park Hanada, T. Ji-Ho Chang Dong-Cheol Oh Meung-Whan Cho Yao, T. |
| Copyright Year | 2006 |
| Description | Author affiliation: Tohoku Univ., Tokyo (In-Ho Im; Jin-Sub Park; Minegishi, T.; Seung-Hwan Park; Hanada, T.) |
| Abstract | We have investigated the low-temperature growth of AlN layers on ZnO/MgO/c-sapphire with varying growth temperature and Al flux. Single-crystalline AlN layers can be grown at 400degC, which is quite low compared to the conventional growth temperature of 1000degC. The interdiffusion of Al and N into ZnO layers and Zn and O into AlN layers are evaluated by SIMS. It was found that the diffusions of Al atoms were affected by the crystal quality of AlN layers and growth temperature. Very low diffusion length of Al below 100 nm into ZnO was observed at the interface between AlN and ZnO. |
| Starting Page | 156 |
| Ending Page | 159 |
| File Size | 2561618 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424405770 |
| DOI | 10.1109/COMMAD.2006.4429904 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-12-06 |
| Publisher Place | Australia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Zinc oxide Plasma temperature Substrates Gallium nitride Nitrogen Molecular beam epitaxial growth Light emitting diodes Lattices Buffer layers SIMS Low Temperature AlN ZnO template Al flux RHEED |
| Content Type | Text |
| Resource Type | Article |
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