NDLI: Gas avalanche pixel detectors

Content Provider	IEEE Xplore Digital Library
Author	Hong, W.S. Cho, H.S. Perez-Mendez, V. Kadyk, J. Palaio, N.
Copyright Year	1997
Description	Author affiliation: Div. of Eng., Lawrence Berkeley Nat. Lab., CA, USA (Hong, W.S.)
Abstract	We describe the structure and avalanche gain of microstrip pixel detectors. Each anode is a square 20 /spl mu/m/spl times/20 /spl mu/m in size connected to an individual pad through a plated center section. The cathodes are plated squares interconnected to a common lead. The anode squares have a pitch of 200 /spl mu/m in both x-and y-directions. The anodes and cathodes are aluminum layers deposited on amorphous silicon alloyed with carbon (a-Si:C:H) to produce a bulk resistivity of /spl sim/10/sup 13/ /spl Omega/cm. Measurements on signals from a group of anodes shows an avalanche gas gain close to 10/sup 4/ at a cathode-anode potential of 640 volts using a gas mixture of 50/50 argon-ethane. The avalanche gain is a factor of 3 higher than that of a same pitch microstrip device. For our initial measurements, 16 anodes were connected together to a charge sensitive preamplifier. In a final chamber each anode would be connected to a readout a-Si:H p-i-n diode and signals read out sequentially as in flat screen devices.
Starting Page	662
Ending Page	666
File Size	449873
Page Count	5
File Format	PDF
ISBN	0780335341
ISSN	10823654
DOI	10.1109/NSSMIC.1996.591086
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-11-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Anodes Detectors Microstrip Cathodes Amorphous silicon Aluminum alloys Silicon alloys Conductivity Gain measurement Current measurement
Content Type	Text
Resource Type	Article

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