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Content Provider | IEEE Xplore Digital Library |
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Author | Li, X. Gessert, T.A. Coutts, T.J. |
Copyright Year | 1992 |
Description | Author affiliation: Nat. Renewable Energy Lab., Golden, CO, USA (Li, X.; Gessert, T.A.; Coutts, T.J.) |
Abstract | The authors investigate the surface modification of InP by hydrogenation that occurs during fabrication of the indium tin oxide (ITO)/InP device. They attempt to establish relationships between hydrogen pressure in the sputtering environment and the change in the near-surface properties of p-type InP substrates. Specific near-surface properties will include the carrier concentration and junction depth. Because it has been previously observed that solar cell performance is affected by post-deposition heat treatment (PDHT), this will be systematically performed and studied. From this analysis, it is shown that effects due to hydrogenation can be relaxed by PDHT, resulting in a Schottky-like ITO/InP junction behavior. |
Starting Page | 310 |
Ending Page | 313 |
File Size | 346270 |
Page Count | 4 |
File Format | |
ISBN | 0780305221 |
DOI | 10.1109/ICIPRM.1992.235691 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1992-04-21 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Magnetic properties Indium tin oxide Hydrogen Surface cleaning Indium phosphide Doping Current density Space charge Capacitance-voltage characteristics Radiative recombination |
Content Type | Text |
Resource Type | Article |
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