NDLI: Improvements in selective area growth of InP by metal-organic vapor phase epitaxy

Content Provider	IEEE Xplore Digital Library
Author	Veuhoff, E. Heinecke, H. Rieger, J. Baumeister, H. Schimpe, R. Prohl, S.
Copyright Year	1992
Description	Author affiliation: Siemens Res. Lab., Munich, Germany (Veuhoff, E.; Heinecke, H.; Rieger, J.; Baumeister, H.; Schimpe, R.; Prohl, S.)
Abstract	Improvements in selective area epitaxy (SAE) of InP have been achieved by optimizing the epitaxial parameters in metal-organic vapor-phase epitaxy (MOVPE). The significant effect of V/III ratio on the shape of the selectively grown ridge allows the tailoring of ridge geometries for device applications: at high V/III ratios, ridges with vertical side walls can be obtained on substrates with a slight appropriate misorientation. The data show that in contrast to metal-organic molecular-beam epitaxy (MOMBE) for SAE in MOVPE both surface kinetics (diffusion, adsorption-desorption relation) and gas phase diffusion play an important role; in MOMBE only surface kinetics is present and is almost comparable to the mechanisms found in the present study. The results are described by a qualitative model taking into account the dependence of the surface mobility of the adatoms on group V adsorption flux. The reduction of the adatom surface diffusion length should have significant consequences for selective growth of ternary and quaternary layers. These results will also impact selective area growth in the vicinity of mesa stripes, which is important for the monolithic integration of a laser ridge and a waveguide.
Starting Page	210
Ending Page	213
File Size	505742
Page Count	4
File Format	PDF
ISBN	0780305221
DOI	10.1109/ICIPRM.1992.235602
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-04-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Epitaxial growth Molecular beam epitaxial growth Epitaxial layers Kinetic theory Shape Geometry Substrates Semiconductor process modeling Monolithic integrated circuits
Content Type	Text
Resource Type	Article

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