NDLI: Electrical characterisation of strained modulation doped In/sub x/Ga/sub 1-x/As/InP heterostructures with extremely high mobilities

Content Provider	IEEE Xplore Digital Library
Author	Schapers, T. Appenzeller, J. Meyer, R. Hardtdegen, H. Loken-Larsen, H. Luth, H.
Copyright Year	1992
Description	Author affiliation: Inst. fur Schicht- und Ionentech., Julich, Germany (Schapers, T.; Appenzeller, J.; Meyer, R.; Hardtdegen, H.; Loken-Larsen, H.; Luth, H.)
Abstract	It is shown that the mobility of modulation-doped In/sub x/Ga/sub 1-x/As/InP can be effectively increased by increasing the indium content in the channel up to a value of 77%. The carrier concentration also increased for higher indium contents due to more efficient carrier transport and confinement. Calculated mobilities for different indium contents are in good agreement with experimentally determined values. For indium contents higher than 77% the strained channel degenerates as the layer begins to relax. No conducting bypass channel was observed as shown by Shubnikov-de Haas and quantum Hall measurements. Due to the high electron mobilities even at room temperature, strained modulation doped In/sub x/Ga/sub 1-x/As/InP should find interesting applications in high-speed electronics, and because of the low effective electron mass it might also be attractive for studies in the quantum transport regime.
Starting Page	485
Ending Page	488
File Size	197788
Page Count	4
File Format	PDF
ISBN	0780305221
DOI	10.1109/ICIPRM.1992.235558
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-04-21
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Epitaxial layers Indium phosphide Hall effect Electron mobility Magnetic field measurement Temperature distribution Optical scattering Conducting materials Photonic band gap Indium gallium arsenide
Content Type	Text
Resource Type	Article

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