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Content Provider | IEEE Xplore Digital Library |
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Author | Kanamura, M. Zhou, Y.K. Okumura, S. Asami, K. Nakajima, M. Harima, H. Asahi, H. |
Copyright Year | 2001 |
Description | Author affiliation: Inst. of Sci. & Ind. Res., Osaka Univ., Japan (Kanamura, M.) |
Abstract | New diluted magnetic semiconductor InMnAsSb/InSb heterostructures were proposed and grown an InAs substrates by low-temperature molecular beam epitaxy. Raman scattering measurements show that InMnAsSb layer grown on InSb at 250/spl deg/C has higher crystal quality than that grown at 280/spl deg/C. Light-induced ferromagnetic order was observed, for the first time, when these samples were illuminated with the light of wavelengths longer than 2 /spl mu/m. Corresponding to the Raman data, better light-induced ferromagnetic order was for the 250/spl deg/C-grown samples. The long-term preservation of the ferromagnetic order was confirmed even after the light-off. |
Sponsorship | Japan Soc. Appl. Phys. |
Starting Page | 599 |
Ending Page | 602 |
File Size | 261971 |
Page Count | 4 |
File Format | |
ISBN | 0780367006 |
ISSN | 10928669 |
DOI | 10.1109/ICIPRM.2001.929224 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2001-05-14 |
Publisher Place | Japan |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Magnetic semiconductors Plasma temperature Molecular beam epitaxial growth Raman scattering Photonic band gap Buffer layers X-ray diffraction Physics Substrates Time measurement |
Content Type | Text |
Resource Type | Article |
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