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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Motohisa, J. Terasawa, T. Kusuhara, T. Nakajima, F. Fukui, T. |
| Copyright Year | 2001 |
| Description | Author affiliation: Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan (Motohisa, J.) |
| Abstract | We describe formation of self-assembling InAs quantum dots (QDs) combined with selective area metalorganic vapor phase epitaxy (SA-MOVPE) on masked [001] GaAs substrates. It was found that formation of QDs in SA-MOVPE depended on the direction and top width of the GaAs mesa and wire structures. In particular, surface steps, which are mainly formed at the edge of the [001] top surface, affect the formation of QDs. Such step-induced islanding is utilized to form a position controlled single InAs QD at the bend of the wires in two directions. We also discuss a possible application of QDs for single electron memories where position-controlled QDs are used in combination with ridge quantum wires realized by the SA-MOVPE technology. |
| Sponsorship | Japan Soc. Appl. Phys. |
| Starting Page | 370 |
| Ending Page | 373 |
| File Size | 498556 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780367006 |
| ISSN | 10928669 |
| DOI | 10.1109/ICIPRM.2001.929135 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-05-14 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Quantum dots US Department of Transportation Gallium arsenide Wire Substrates Single electron memory Epitaxial growth Scanning electron microscopy Diode lasers Size control |
| Content Type | Text |
| Resource Type | Article |
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