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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bollaert, S. Cordier, Y. Zaknoune, M. Happy, H. Lepilliet, S. Cappy, A. |
| Copyright Year | 2001 |
| Description | Author affiliation: Dept. Hyperfrequences et Semicond., Inst. d'Electron. et de Microelectron. du Nord, Villeneuve d'Ascq, France (Bollaert, S.) |
| Abstract | State-of-the art metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on a GaAs substrate with 60 nanometer gate length is reported. The DC and microwave performance were investigated. Typical drain-to-source current Ids of 600 mA/mm and extrinsic transconductance of 850 mS/mm were obtained with our devices. Cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ are 260 GHz and 490 GHz respectively. To our knowledge, these frequency performances are the highest ever reported for HEMTs on GaAs substrate. |
| Sponsorship | Japan Soc. Appl. Phys. |
| Starting Page | 192 |
| Ending Page | 195 |
| File Size | 422582 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780367006 |
| ISSN | 10928669 |
| DOI | 10.1109/ICIPRM.2001.929090 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-05-14 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | HEMTs MODFETs Gallium arsenide Substrates Indium compounds Buffer layers Temperature Lattices Silicon Strain measurement |
| Content Type | Text |
| Resource Type | Article |
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