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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ferrari, C. Villaggi, E. Armani, N. Carta, G. Rossetto, G. |
| Copyright Year | 2001 |
| Description | Author affiliation: Istituto MASPEC, CNR, Parma, Italy (Ferrari, C.) |
| Abstract | The lattice parameter and the composition of InGaAs/InP lattice matched single heterostructures have been independently determined by measuring the high resolution X-ray diffraction profile and the absorption of the X-ray beam diffracted from the InP substrate. Mass absorption coefficients taken from recent corrections of values based on relativistic calculation of the X-ray scattering have been used. In contrast with previous work which reported a linear dependence of the lattice parameter with composition, we find a 6% larger In content in the InGaAs/InP lattice matched alloy. The result has been confirmed by X-ray fluorescence of the layer and by analysis of standards made of InAs and GaAs fine ground crystals. The results are in good agreement with the predictions of a simple model of lattice deformation based on elasticity theory. |
| Sponsorship | Japan Soc. Appl. Phys. |
| Starting Page | 322 |
| Ending Page | 325 |
| File Size | 383830 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780367006 |
| ISSN | 10928669 |
| DOI | 10.1109/ICIPRM.2001.929123 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-05-14 |
| Publisher Place | Japan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Lattices Indium gallium arsenide Indium phosphide X-ray diffraction Electromagnetic wave absorption Molecular beam epitaxial growth Substrates X-ray scattering Fluorescence Gallium arsenide |
| Content Type | Text |
| Resource Type | Article |
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