NDLI: Self-assembled formation of InP nanopore arrays by electrochemical anodization

Content Provider	IEEE Xplore Digital Library
Author	Fujikura, H. Liu, A. Sato, T. Hirano, T. Hasegawa, H.
Copyright Year	2000
Description	Author affiliation: Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan (Fujikura, H.)
Abstract	High density, uniform arrays of <001>-oriented straight nanopores were successfully formed on [001] n-InP surfaces in a self-assembled fashion by electrochemical anodization in 1 M HCl+HNO/sub 3/ solution. Unlike porous Si, the pores do not have side branches and possessed nearly equal-sized square-shapes defined by four crystalline flat [110] facets. Preferential etching along vertical <001>-direction due to slow etching rates on [110] side facets may be responsible for formation of such a uniform structure. At low temperature, the nanopore arrays showed strong red-shifted photoluminescence (PL) emission probably due to a transition involving a broad surface state continuum at the pore wall surfaces. On the other hand, a strong blue-shifted PL emission was observed at room temperature, confirming presence of quantum size effect in the pore walls as expected from the structural observations.
Starting Page	510
Ending Page	513
File Size	385511
Page Count	4
File Format	PDF
ISBN	0780363205
ISSN	10928669
DOI	10.1109/ICIPRM.2000.850346
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Self-assembly Indium phosphide Nanoporous materials Optical arrays Electrodes Optical saturation Scanning electron microscopy Nanofabrication Electronic equipment testing Etching
Content Type	Text
Resource Type	Article

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