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Content Provider | IEEE Xplore Digital Library |
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Author | Hodel, U. Orzati, A. Marso, M. Homan, O. Fox, A. Hart, A.V.D. Forster, A. Kordos, P. Luth, H. |
Copyright Year | 2000 |
Description | Author affiliation: Inst. of Thin Film & Ion Technol., Forschungszentrum Julich GmbH, Germany (Hodel, U.) |
Abstract | We present a novel InAlAs/InGaAs layer structure for monolithically integrating MSM diodes and HEMTs into an photoreceiver. The novel layer system, grown on semiinsulating InP, consists of a typical HEMT layer sequence with an additional lattice matched InGaAs layer under the 2DEG channel of the HEMT. This additional layer acts as a photoabsorption layer and enables the production of integrated MSM/HEMT circuits without an additional epitaxial or technological step. Our investigations showed a minor influence of a varying absorption layer thickness on the behavior of the HEMT, leading to a 30% decrease in f/sub T/ and f/sub max/. A 300 nm gate length HEMT can be produced with f/sub T/=75 GHz and f/sub max/=105 GHz on a layer sequence with 200 nm absorption layer thickness. The MSM diodes with a finger width and distance of 500 nm show a bandwidth of about 20 GHz and a responsivity of 0.4 A/W on the same system. On the novel layer system, a monolithically integrated photoreceiver, consisting of an MSM diode and a distributed amplifier (two HEMTs) with a response of 0.7 A/W and a bandwidth of 13.5 GHz is presented. |
Starting Page | 466 |
Ending Page | 469 |
File Size | 356477 |
Page Count | 4 |
File Format | |
ISBN | 0780363205 |
ISSN | 10928669 |
DOI | 10.1109/ICIPRM.2000.850334 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2000-05-14 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Indium compounds Indium gallium arsenide HEMTs MODFETs Diodes Absorption Bandwidth Indium phosphide Lattices Production |
Content Type | Text |
Resource Type | Article |
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