NDLI: SSRM analysis of dopant diffusion in InP based structures

Content Provider	IEEE Xplore Digital Library
Author	Geva, M. Akulova, Y. Ougazzaden, A. Holman, J.P. Richter, S. Kleiman, R.N.
Copyright Year	2000
Description	Author affiliation: Optoelectron. Center, Lucent Technol., Breinigsville, PA, USA (Geva, M.)
Abstract	We have successfully used scanning spreading resistance microscopy (SSRM) for two-dimensional (2D) analysis of MOCVD-grown InP-based semiconductor structures. SSRM is an analytical technique based on atomic force microscopy (AFM), where the instrument is equipped with a conductive tip that is biased relative to the sample. Ideally, the spreading resistance value at the tip contact region of the surface can be derived from the measured electrical current. The spreading resistance is a function, among others, of the local carrier concentration at the surface region surrounding the probe's tip. While not yet quantitative, SSRM analysis, with its high spatial resolution of 10-30 nm, proved to effectively complement SIMS, an analytical technique whose spatial resolution is limited to dimensions larger by about three orders of magnitude. In particular, we found SSRM effective in detecting low level lateral dopant diffusion, and in assessing the effectiveness of barrier layers in blocking such diffusion. We have used both metal tips and Si tips coated with a thin doped-diamond layer. Differences in images obtained with these two types of tips, as well as in images obtained from different samples of a similar structure, support the proposition that besides the spreading resistance, there is a non-negligible contribution of the tip-surface resistance. Although this complicates the conversion of the SSRM output signal to carrier concentration, quantification could still be attainable via a specially designed calibration procedure. In this paper we present SSRM analysis of InP-based test structures, with n, p, and semi-insulating layers. We studied Fe diffusion from a semi-insulating InP(Fe) layer into an undoped Q layer, and lateral Zn-diffusion from a Zn-doped ridge into a semi-insulating layer through a vertical boundary layer.
Starting Page	48
Ending Page	51
File Size	414331
Page Count	4
File Format	PDF
ISBN	0780363205
ISSN	10928669
DOI	10.1109/ICIPRM.2000.850227
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-14
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Surface resistance Atomic force microscopy Electric resistance Spatial resolution Atomic measurements Instruments Contact resistance Current measurement Electrical resistance measurement
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

2D carrier profiling of InP-based structures using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Reliable 2-D carrier profiling with SSRM on InP-based devices

Characterization of InP using metal-insulator-semiconductor-tunneling microscopy (MISTM)

Tunneling at emitter periphery in silicon nitride passivated InP/InGaAs HBTs

Apparatus for studying ultrasmall contacts

Effect of matrix on InAs self-organized nanostructures on InP substrate

Two-dimensional carrier profiling with sub-nm resolution using SSRM: From basic concept to TCAD calibration and device tuning

High resolution electrical characterization of laterally overgrown epitaxial InP

Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors

SSRM analysis of dopant diffusion in InP based structures

Similar Documents

2D carrier profiling of InP-based structures using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Reliable 2-D carrier profiling with SSRM on InP-based devices

Characterization of InP using metal-insulator-semiconductor-tunneling microscopy (MISTM)

Tunneling at emitter periphery in silicon nitride passivated InP/InGaAs HBTs

Apparatus for studying ultrasmall contacts

Effect of matrix on InAs self-organized nanostructures on InP substrate

Two-dimensional carrier profiling with sub-nm resolution using SSRM: From basic concept to TCAD calibration and device tuning

High resolution electrical characterization of laterally overgrown epitaxial InP

Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors

SSRM analysis of dopant diffusion in InP based structures