NDLI: Stimulated approach to SOI structure formation by low dose implantation

Content Provider	IEEE Xplore Digital Library
Author	Litovchenko, V.G. Efremov, A.A.
Copyright Year	1999
Description	Author affiliation: Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine (Litovchenko, V.G.)
Abstract	Physical mechanisms of oxygen transport and precipitation in silicon during the synthesis of a buried oxide layer are reviewed. Different effects caused by interaction of weakly bonded oxygen with mobile point defects and static defect complexes are analyzed. As a result, the possibilities to control the evolution of the spatial distribution of implanted oxygen by means of gettering and defect engineering are proposed and validated by computer simulations based on a kinetic quasi-chemical description. Special attention is given to carbon induced gettering mechanisms involved in buried oxide synthesis known as Low-Dose Approach Combined with Defect Engineering (LDACODE). SIMS profiling data together with the results of computer simulations show a rather complicated autocatalytic behavior of carbon and an important role of the carbon-vacancy and carbon-oxygen complexes in oxygen accumulation. Some effects in the early stage kinetics of oxygen redistribution are revealed and discussed.
Starting Page	481
Ending Page	485
File Size	461772
Page Count	5
File Format	PDF
ISBN	0780352351
DOI	10.1109/ICMEL.2000.838737
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-14
Publisher Place	Yugoslavia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Bonding Gettering Computer simulation Heat treatment Ion implantation Annealing Kinetic theory Substrates History
Content Type	Text
Resource Type	Article

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