NDLI: New challenges to the modelling and electrical characterisation of ohmic contacts for ULSI devices

Content Provider	IEEE Xplore Digital Library
Author	Holland, A.S. Reeves, G.K.
Copyright Year	1999
Description	Author affiliation: Dept. of Commun. & Electr. Eng., R. Melbourne Inst. of Technol., Vic., Australia (Holland, A.S.)
Abstract	Continuing developments in semiconductor process and materials technology have enabled significant reductions to be achieved in the contact resistance Rc of devices. This reduction is commonly assessed in terms of the specific contact resistance (scr) parameter /spl rho//sub c/ (/spl Omega//spl middot/cm/sup 2/). Such a reduction is essential, for as device dimensions decrease, then so also must /spl rho//sub c/ in order not to compromise down-scaled ULSI device performance. Thus the ability to accurately model contacts and measure /spl rho//sub c/ is essential to ohmic contact development. In this paper the increased difficulty in measuring lower /spl rho//sub c/ values, due to trends in technology, is discussed. The challenges presented by the presence of two interfaces in silicided contacts (metal-silicide-silicon) is also discussed. Experimental values of the scr of an aluminium-titanium silicide interface is determined using multiple cross Kelvin resistor test structures.
Starting Page	461
Ending Page	464
File Size	406015
Page Count	4
File Format	PDF
ISBN	0780352351
DOI	10.1109/ICMEL.2000.838732
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-14
Publisher Place	Yugoslavia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ohmic contacts Ultra large scale integration Testing Contact resistance Kelvin Error correction Resistors Silicides Voltage Chromium
Content Type	Text
Resource Type	Article

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