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Content Provider | IEEE Xplore Digital Library |
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Author | Zenglang Xia Yinbo Li Yuanfu Zhao |
Copyright Year | 1999 |
Description | Author affiliation: Beijing Microelectron. Technol. Inst., China (Zenglang Xia) |
Abstract | This paper reports on the effect of self-heating on hot-carrier effects in deep submicron SOI/NMOS. The impact of the hot carrier is studied as a function of buried oxide thickness. The simulation results show that the self-heating in deep submicron SOI/NMOS becomes serious with the buried oxide thickness increasing, and thus leads to the peak electric field down in the channel region near drain, which decreases the hot-carrier effects in short channel devices. |
Starting Page | 221 |
Ending Page | 223 |
File Size | 225720 |
Page Count | 3 |
File Format | |
ISBN | 0780352351 |
DOI | 10.1109/ICMEL.2000.840560 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2000-05-14 |
Publisher Place | Yugoslavia |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Hot carrier effects MOS devices Thermal conductivity Optical scattering Temperature Heating Hot carriers Silicon Lattices Conducting materials |
Content Type | Text |
Resource Type | Article |
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