NDLI: Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs

Content Provider	IEEE Xplore Digital Library
Author	Hai Jiang Xiaoyan Liu Nuo Xu Yandong He Gang Du Xing Zhang
Copyright Year	1980
Abstract	In this letter, the impact of self-heating effect (SHE) on hot carrier degradation (HCD) in multiple-fin silicon-on-insulator (SOI) FinFETs was investigated. First, the ac conductance method has been utilized to extract the thermal resistance (Rth) of SOI FinFETs with different fin numbers. Then, both dc and ac stresses are applied on the gate and drain of transistors with the source grounded to characterize the HCD. It is found that the device with large fin number demonstrates high-temperature rise caused by SHE, which results in the enhanced generation of oxide bulk trapped charges. Thus, the SHE aggravates the HCD significantly. The influence of SHE on HCD is mitigated when the frequency of ac stress is above 10 MHz. Therefore, special attention to the SHE on HCD must be paid for accurate HCD prediction in FinFETs.
Sponsorship	IEEE Electron Devices Society
Starting Page	1258
Ending Page	1260
Page Count	3
File Size	670219
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal resistance FinFETs Degradation Hot carriers Silicon-on-insulator Reliability thermal resistance (Rth) hot carrier degradation (HCD) reliability self-heating effect (SHE) silicon-on-insulator (SOI)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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